金属有机物化学气相淀积,MOCVD
1)MOCVD金属有机物化学气相淀积
1.The GaN-based wafers for UV photodetectors array are grown successfully byMOCVD method.报道了在蓝宝石衬底上采用金属有机物化学气相淀积技术成功地生长出了GaN基紫外探测器阵列外延材料,生长的高Al组分AlxGa1-xN(x≥0。
2)metal organic chemical vapor deposition金属有机物化学气相淀积
1.The device structure is optimized firstly,then the structure is grown bymetal organic chemical vapor deposition(MOCVD).首先优化设计了器件结构,并利用金属有机物化学气相淀积(MOCVD)进行了器件的外延生长。
2.The p-type GaN(p-GaN) samples grown at low temperature 870—980℃ on sapphire substrate were prepared by themetal organic chemical vapor deposition technique(MOCVD), and their electrical properties were investigated.采用金属有机物化学气相淀积技术(MOCVD)在蓝宝石衬底上低温(870—980℃)生长p型氮化镓(p-GaN)。
3)MOCVD金属有机化学气相淀积
4)MOCVD金属有机化合物化学气相淀积
1.This paper presents a new fuzzy predictive control method for theMOCVD device control system set to handle the non-linearity,time variability and large delay of plant controls.为解决金属有机化合物化学气相淀积(MOCVD)设备温度控制的非线性、时变性以及大滞后等问题,给出了一种用模糊控制和预测控制相结合的复合控制方法。
5)metalorganic chemical vapor deposition(MOCVD)金属有机物化学气相淀积(MOCVD)
1.36N multiple quantum wells(MQWs)structure for deep ultraviolet emission has been grown on sapphire by metalorganic chemical vapor deposition(MOCVD).采用金属有机物化学气相淀积(MOCVD)技术,在蓝宝石衬底上生长了Al0。
6)mocvd有机金属化学汽相淀积
英文短句/例句
1.metallo organic chemical vapor deposition有机金属化学汽相淀积
2.photochemical vapor deposition oxide光化学汽相淀积氧化物
3.Simulation and optimization design in MOCVD reactor金属有机化学气相沉淀反应器结构的模拟优化
4.cvd polysilicon化学汽相淀积多晶硅
5.plasma chemical vapor deposition等离子体化学汽相淀积
6.modified chemical vapor deposition改进的化学汽相淀积
7.chemical vapor deposition reactor化学汽相淀积反应器
8.The Praparation and Chemical Mechanism of Functional Graded Materials Using Metal Organic Chemistry Vapour Deposition;金属有机化学气相沉积法制备功能梯度材料的方法和机理的研究
9.Research on Preparing Yttria Coatings by Metalorganic Chemical Vapor Deposition;金属有机化学气相沉积法制备氧化钇涂层的探索研究
10.Growth of ZnO Films on Different Substrates by Metal Organic Chemical Vapor Deposition不同衬底上氧化锌薄膜的金属有机化学气相沉积方法生长(英文)
11.Iridium Film Prepared by Metal-Organic Chemical Vapor Deposition金属有机化合物化学气相沉积法制备铱薄膜的研究
12.Metal Organic Chemical Vapor Deposition( MOCVD) is a key technology in growing thin-films.金属有机化学气相沉积(OCVD)一门制备薄膜材料的关键技术。
13.Synthesis and Characterization of Novel Copper（Ⅰ）Complexes as Precursors for Metal-Organic Chemical Vapor Deposition;Cu（Ⅰ）金属有机化学气相沉积前驱物的合成与表征
14.A New Preparation Technology of Mica Pearlescent Pigment by Metal Organic Chemistry Vapour Deposition (MOCVD) and Their Application;金属有机化学气相沉积（MOCVD）法制备云母珠光颜料新工艺及应用研究
15.The triangular pits eliminate of (110) a-plane GaN growth by metal-orgamic chemical vapor deposition金属有机物化学气相沉积生长的a(110)面GaN三角坑缺陷的消除研究
16.A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.利用金属有机气相淀积方法生长了一种新型吸收体:高反射率半导体可饱和吸收镜.
17.Studies of Metal Oxides Film Synthesized by Themal Vapor Phase Transport and Condensation;金属氧化物薄膜的热汽相沉积法制备研究
18.thermochemistry of organometallic compounds有机金属化合物热化学
相关短句/例句
metal organic chemical vapor deposition金属有机物化学气相淀积
1.The device structure is optimized firstly,then the structure is grown bymetal organic chemical vapor deposition(MOCVD).首先优化设计了器件结构,并利用金属有机物化学气相淀积(MOCVD)进行了器件的外延生长。
2.The p-type GaN(p-GaN) samples grown at low temperature 870—980℃ on sapphire substrate were prepared by themetal organic chemical vapor deposition technique(MOCVD), and their electrical properties were investigated.采用金属有机物化学气相淀积技术(MOCVD)在蓝宝石衬底上低温(870—980℃)生长p型氮化镓(p-GaN)。
3)MOCVD金属有机化学气相淀积
4)MOCVD金属有机化合物化学气相淀积
1.This paper presents a new fuzzy predictive control method for theMOCVD device control system set to handle the non-linearity,time variability and large delay of plant controls.为解决金属有机化合物化学气相淀积(MOCVD)设备温度控制的非线性、时变性以及大滞后等问题,给出了一种用模糊控制和预测控制相结合的复合控制方法。
5)metalorganic chemical vapor deposition(MOCVD)金属有机物化学气相淀积(MOCVD)
1.36N multiple quantum wells(MQWs)structure for deep ultraviolet emission has been grown on sapphire by metalorganic chemical vapor deposition(MOCVD).采用金属有机物化学气相淀积(MOCVD)技术,在蓝宝石衬底上生长了Al0。
6)mocvd有机金属化学汽相淀积
延伸阅读
金属有机化合物化学气相沉积分子式：CAS号：性质：用金属有机化合物热分解进行气相外延生长的方法。其基本原理是将含有外延材料组分的金属有机化合物气体通过载气输送到反应室，在一定温度下进行外延生长。MOCVD技术主要应用于III-V族II-VI族化合物半导体超晶格量子阱等低维材料生长和多元固溶体的多层异质结构材料的生长，还可用于制备高温超导薄膜，铁电薄膜，传感器薄膜，太阳能电池薄膜及其他金属薄膜。该技术工艺可控，操作简便及适用于大规模生产等优点。其缺点是所用源材料为易燃剧毒物质。
