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等离子体化学气相沉积 plasma chemical vapor deposition英语短句 例句大全

时间:2021-01-02 20:41:05

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等离子体化学气相沉积 plasma chemical vapor deposition英语短句 例句大全

等离子体化学气相沉积,plasma chemical vapor deposition

1)plasma chemical vapor deposition等离子体化学气相沉积

1.Influence of discharge current on hot cathodeplasma chemical vapor deposition of diamond films;放电电流对热阴极等离子体化学气相沉积金刚石膜影响

2.Effect ofplasma chemical vapor deposition parameters on electron property in Ar plasma;等离子体化学气相沉积参量对Ar等离子体电子特性的影响

3.The relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow dischargeplasma chemical vapor deposition process was discussed.研究了在热阴极辉光放电等离子体化学气相沉积金刚石膜过程中,热阴极辉光放电特性与金刚石膜沉积工艺的关系。

英文短句/例句

1.plasma activated chemical vapour deposition等离子体化学气相沉积

2.Diamond thin films grown up by microwave plasma CVD微波等离子体化学气相沉积金刚石簿膜

3.WORKING PRINCIPLE OF MICROWAVE PLASMA CVD SET UP微波等离子体化学气相沉积装置的工作原理

4.Study on device of magneto-active PECVD;磁激活增强等离子体化学气相沉积设备的研制

5.TEM Study on Diamond Films Deposited by MPCVD;微波等离子体化学气相沉积金刚石薄膜的电子显微学分析

6.Atmospheric-pressure Plasma Chemical Vapor Deposition for Polycrystalline Silicon Preparation from SiCl_4 and OES Diagnosis由SiCl_4制备多晶硅的大气压等离子体化学气相沉积及发射光谱诊断

7.ANALYSIS OF THE MORPHOLOGIES OF DIAMOND FILM GROWN BY MICROWAVE PLASMA CVD METHOD微波等离子体化学气相沉积金刚石薄膜形貌分析

8.NEW MICROWAVE PLASMA CVD SET UP FOR DIAMOND FILM GROWTH新型微波等离子体化学气相沉积金刚石薄膜装置

9.Research on High Quality Diamond Films in Microwave Plasma CVD;微波等离子体化学气相沉积法制备高质量金刚石膜研究

10.Study on Synthetic Silica Glass by Plasma Chemical Vapor Deposition;等离子体化学气相沉积合成石英玻璃的基础研究

11.New-style Nano-sheets Carbon Films Fabricated by Microwave Plasma Chemical Vapor Deposition微波等离子体化学气相沉积法制备的新型纳米片状碳膜(英文)

12.Hot cathode chemical vapor deposition method was established in order to deposit high-quality diamond films with high deposition rate.为快速沉积高品质金刚石膜,建立了热阴极等离子体化学气相沉积方法.

13.Study on Device of Magneto-active Plasma Enhanced Chemical Vapor Deposition;磁激活等离子体增强化学气相沉积设备的研制

14.The Study on DLC Films Deposited by PECVD;等离子体增强化学气相沉积DLC膜的研究

15.Study on Characteristic of Si_3N_4 Nanopowder Prepared by ICPECVD;ICP等离子体增强化学气相沉积制备纳米粉体氮化硅特性研究

16.The Study of the Deposition of SiO_2 Films with RF Cold Plasma at Atmospheric-pressure;常压射频低温等离子体增强化学气相沉积二氧化硅薄膜的研究

17.Synthesis and Characterization of Carbon Nanotubes by Plasma-enhanced Chemical Vapor Deposition;等离子体增强化学气相沉积制备碳纳米管及其表征

18.One-dimensional Nanomaterials: Plasma and Chemical Vapor-Phase Synthesis and Characterizations;等离子体及化学气相沉积法合成一维纳米材料及性能研究

相关短句/例句

PCVD等离子体化学气相沉积

1.DEPOSITION THEORY OF THIN HARDPCVD COATINGS;等离子体化学气相沉积(PCVD)硬质膜成膜理论

2.Si B N composite films had been prepared at proper processing parameters by RFPCVD.使用工业射频等离子体化学气相沉积 (RF -PCVD)设备 ,通过控制合理的工艺参数 ,在不同的基体负偏压下 ,分别制备出了Si B N非晶以及含有h BN、c BN显著结晶相的Si B N复合薄膜。

3.SnO 2 Sb thin film is prepared withPCVD The film possesses better gas sensitivity When temperature rises, the response time maintains almost the same but the recovery time reduces and the sensibility gets higher When the temperature reaches 200℃ or more, the sensitivity maintains stable The difference between the sensibility of the resistors of different resistance is small (4 refs利用等离子体化学气相沉积法制备了SnO2-Sb导电薄膜,测试了SnO2-Sb的气敏效应。

3)PECVD等离子体化学气相沉积

1.Study on device of magneto-activePECVD;磁激活增强等离子体化学气相沉积设备的研制

4)plasma enhanced chemical vapor deposition等离子体化学气相沉积

1.Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.等离子体化学气相沉积技术制备氢化硅薄膜工艺条件成熟稳定而成为薄膜制备的首选方法。

2.This review will describe the deposition methods, properties and some applications of DLC films by Plasma Enhanced Chemical Vapor Deposition.这篇综述介绍了用等离子体化学气相沉积DLC膜的沉积方法、所制备薄膜的性能及应用,最后展望了DLC膜的发展趋势。

5)Plasma CVD等离子体化学气相沉积

6)Plasma chemical vapor deposition等离子化学气相沉积

延伸阅读

微波等离子体化学气相沉积分子式:CAS号:性质:用微波等离子体激活化学反应,进行气相沉积的技术。微波等离子体增强了气体反应活性,加速气相分解反应和表面原子的迁移,使沉积过程可以在较低生长温度下进行。常用设备在一低压化学气相沉积(CVD)反应管上交叉安装一共振腔和与之匹配的微波发射器。在CVD反应管中被共振腔包围气体可通过微波作用形成等离子体,微波频率通常为2.45GHz,发射功率通常在几百瓦至1kW以上。该方法对于低熔点和高温下不稳定的化合物的薄膜生长更为合适。

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