等离子刻蚀,Plasma Etching
1)Plasma Etching等离子刻蚀
1.Research on array carbon nanotubes film without substrate by centrifugal infiltration and plasma etching离心渗透等离子刻蚀法制备无基底阵列式碳纳米管复合膜
2.The methods for making carbon nanotubes(CNTs)/ polymer composite films by plasma etching are researched.本文研究了等离子刻蚀碳纳米管(CNTs)聚合物复合膜的工艺,并采用测量接触电阻表征薄膜的刻蚀效果。
英文短句/例句
1.Research on array carbon nanotubes film without substrate by centrifugal infiltration and plasma etching离心渗透等离子刻蚀法制备无基底阵列式碳纳米管复合膜
2.In the plasma-etching mode the passivation layer that is formed on the surface is likely to be thicker than in the case of RIE.在等离子刻蚀模式下，表面形成了比使用RIE情况下更厚的钝化层。
3.plasma sputter combined etching等离子溅射复合刻蚀
4.NUMERICAL STUDIES ON ETCH PROFILES IN HIGH-DENSITY PLASMA;高密度等离子体刻蚀轮廓的数值研究
5.Investigation of Etching SiCOH Films by Dual-Frequency Capacitively Coupled PlasmaSiCOH薄膜的双频等离子体刻蚀研究
6.Simulations of Plasma Etching Based on Diffusion Limited Erosion Model基于扩散限制刻蚀模型的等离子体刻蚀模拟研究
7.Investigation of Inductively Coupled Fluorocarbon Plasma and Etching of SiO_2;碳氟感应耦合等离子体及其SiO_2介质刻蚀研究
8.The Study of the Etching Process with RF Cold Plasma at Atmospheric-pressure;常压射频冷等离子体在刻蚀工艺中的应用研究
9.Inductive Couple Plasmas Etching Processing of InSb Wafer电感耦合等离子体刻蚀InSb芯片工艺的研究
10.Acceptable Error of Etching Depth in Ion Beam Etching Microlens离子束蚀刻微透镜中蚀刻深度允许误差的研究
11.In situ Monitoring Etch Process and Endpoint for LSI by the Plasma Emission Spectroscopy大规模集成电路刻蚀过程和终点的在线监测──等离子发射光谱法
12.Modeling and Simulation for Inductively Coupled Plasma Etching of Silicon in MEMS Fabrications;MEMS加工中电感耦合等离子体（ICP）刻蚀硅片的模型与模拟
13.Study of Inductively Coupled Plasma Etch of InP and Fabrication of 14xxnm Pump Laser Diodes;感应耦合等离子体刻蚀InP研究与14xxnm泵浦激光器制作
14.Plasma Etching and Parameters Optimizing for Flexible PI Substrate to Produce Flying Lead等离子蚀刻挠性PI基材制作悬空引线及其参数优化
15.Inductively coupled plasma reactive ion etching of InSb photovoltaic detector arraysInSb阵列探测芯片的感应耦合等离子反应刻蚀研究
16.planar plasma reactor平面式等离子体腐蚀器
17.radical plasma etching自由基等离子体腐蚀
18.Generic specification of ion beam etching systemGB/T15861-1995离子束蚀刻机通用技术条件
相关短句/例句
plasma etching等离子蚀刻
1.At the present time,there are processes of punching,numerical control milling,chemical etching andplasma etching to open windows on the PI substrate.目前采用的在基材上开窗口的方法有机械冲切、数控铣、化学试剂蚀刻法和等离子蚀刻法等。
3)plasma etching等离子体刻蚀
1.Effects ofplasma etching on Nafion~ membrane performances;等离子体刻蚀对Nafion~膜性能的影响
2.Application of Emission Spectrometry in Trace Fluorine Analysis of Flue Gas from Plasma Etching;发射光谱法在等离子体刻蚀废气微量F元素检测中的应用研究
3.Study of the ECRplasma etching process of PZT ferroelectric thin film materials;PZT铁电薄膜材料的ECR等离子体刻蚀研究
4)plasma etch等离子体刻蚀
1.Silicon-micro-accelerometer is fabricated byplasma etch technology.采用等离子体刻蚀技术制作成硅微加速度计。
5)Plasma etching apparatus等离子刻蚀设备
6)plasma etch等离子体蚀刻
1.Improve diffraction efficiency of relief holographic gratings byplasma etch;用等离子体蚀刻法提高浮雕全息光栅的衍射效率
2.Theplasma etch theory on oxide and polysilicon in microelectronics manufacturing has been investigated.等离子体蚀刻硅深沟道用作存贮器件的储存电容有非常重要的作用,就等离子体在微电子制造领域中蚀刻二氧化硅,多晶硅的原理和如何控制形状(profile)和深沟道的深度做了研究,解释了HBr,NF3,He_30%O2气体,压力对蚀刻速率,Si/SiO2蚀刻选择比的影响。
延伸阅读
刻刻1.每时每刻。
